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Publication details

Document type
Journal articles

Document subtype
Full paper

Title
Point defects in BaSi2 thin films for photovoltaic applications studied by positron annihilation spectroscopy

Participants in the publication
A. Montes (Author)
FACULDADE DE CIÊNCIAS DA UNIVERSIDADE DE LISBOA
Instituto Dom Luiz (IDL), Faculdade de Ciências, Universidade de Lisboa, Campo Grande, 1749–016, Lisboa, Portugal
S. W. H. Eijt (Author)
Y. Tian (Author)
R. Gram (Author)
H. Schut (Author)
T. Suemasu (Author)
N. Usami (Author)
M. Zeman (Author)
J. Serra (Author)
Dep. Engenharia Geográfica, Geofísica e Energia
IDL - Instituto Dom Luiz
O. Isabella (Author)

Scope
International

Refereeing
Yes

Date of Publication
2020-02-24

Where published
Journal of Applied Physics

Publication Identifiers
ISSN - 0021-8979

Publisher
AIP Publishing

Volume
127
Number
8

Starting page
085304

Document Identifiers
DOI - https://doi.org/10.1063/1.5126264
URL - http://dx.doi.org/10.1063/1.5126264


Export

APA
A. Montes, S. W. H. Eijt, Y. Tian, R. Gram, H. Schut, T. Suemasu, N. Usami, M. Zeman, J. Serra, O. Isabella, (2020). Point defects in BaSi2 thin films for photovoltaic applications studied by positron annihilation spectroscopy. Journal of Applied Physics, 127, ISSN 0021-8979. eISSN . http://dx.doi.org/10.1063/1.5126264

IEEE
A. Montes, S. W. H. Eijt, Y. Tian, R. Gram, H. Schut, T. Suemasu, N. Usami, M. Zeman, J. Serra, O. Isabella, "Point defects in BaSi2 thin films for photovoltaic applications studied by positron annihilation spectroscopy" in Journal of Applied Physics, vol. 127, 2020. 10.1063/1.5126264

BIBTEX
@article{48167, author = {A. Montes and S. W. H. Eijt and Y. Tian and R. Gram and H. Schut and T. Suemasu and N. Usami and M. Zeman and J. Serra and O. Isabella}, title = {Point defects in BaSi2 thin films for photovoltaic applications studied by positron annihilation spectroscopy}, journal = {Journal of Applied Physics}, year = 2020, volume = 127 }