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Publication details

Document type
Journal articles

Document subtype
Full paper

Title
New Stress Activation Method for Kerfless Silicon Wafering Using Ag/Al and Epoxy Stress-Inducing Layers

Participants in the publication
Bellanger P (Author)
Brito MC (Author)
Dep. Engenharia Geográfica, Geofísica e Energia
IDL - Instituto Dom Luiz
Pera DM (Author)
Costa I (Author)
Gaspar G (Author)
Instituto Dom Luiz
IDL - Instituto Dom Luiz
Martini R (Author)
Serra JM (Author)

Scope
International

Refereeing
Yes

Date of Publication
2014

Where published
IEEE JOURNAL OF PHOTOVOLTAICS

Publication Identifiers
ISSN - 2156-3381

Volume
4
Number
5

Starting page
1228
Last page
1234

Document Identifiers
DOI - https://doi.org/10.1109/jphotov.2014.2334893


Export

APA
Bellanger P, Brito MC, Pera DM, Costa I, Gaspar G, Martini R, Serra JM, (2014). New Stress Activation Method for Kerfless Silicon Wafering Using Ag/Al and Epoxy Stress-Inducing Layers. IEEE JOURNAL OF PHOTOVOLTAICS, 4, 1228-1234. ISSN 2156-3381. eISSN .

IEEE
Bellanger P, Brito MC, Pera DM, Costa I, Gaspar G, Martini R, Serra JM, "New Stress Activation Method for Kerfless Silicon Wafering Using Ag/Al and Epoxy Stress-Inducing Layers" in IEEE JOURNAL OF PHOTOVOLTAICS, vol. 4, pp. 1228-1234, 2014. 10.1109/jphotov.2014.2334893

BIBTEX
@article{34724, author = {Bellanger P and Brito MC and Pera DM and Costa I and Gaspar G and Martini R and Serra JM}, title = {New Stress Activation Method for Kerfless Silicon Wafering Using Ag/Al and Epoxy Stress-Inducing Layers}, journal = {IEEE JOURNAL OF PHOTOVOLTAICS}, year = 2014, pages = {1228-1234}, volume = 4 }