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Publication details

Document type
Journal articles

Document subtype
Full paper

Title
Recrystallization of silicon polygonal tubes using an electric closed molten zone

Participants in the publication
R. M Gamboa (Author)
M.C Brito (Author)
Dep. Engenharia Geográfica, Geofísica e Energia
IDL - Instituto Dom Luiz
J. Maia Alves (Author)
Dep. Engenharia Geográfica, Geofísica e Energia
IDL - Instituto Dom Luiz
J.M Serra (Author)
Dep. Engenharia Geográfica, Geofísica e Energia
IDL - Instituto Dom Luiz
A.M Vallêra (Author)
SESUL - Centro de Sistemas de Energia Sustentáveis

Scope
International

Refereeing
Yes

Date of Publication
2011

Where published
JOURNAL OF CRYSTAL GROWTH

Publication Identifiers
ISSN - 0022-0248

Publisher
Elsevier Science

Volume
324
Number
1

Starting page
26
Last page
30

Document Identifiers
DOI - https://doi.org/10.1016/j.jcrysgro.2011.03.037

Rankings
Web Of Science Q3 (2011) - 1.726 - Crystallography
Web Of Science Q2 (2011) - 1.726 - Materials Science, Multidisciplinary
Web Of Science Q2 (2011) - 1.726 - Physics, Applied
SCIMAGO Q2 (2011) - 0.962 - Condensed Matter Physics
SCIMAGO Q2 (2011) - 0.962 - Inorganic Chemistry
SCIMAGO Q1 (2011) - 0.962 - Materials Chemistry

Keywords
Recrystallization Floating Zone technique Semiconducting silicon Solar cells


Export

APA
R. M Gamboa, M.C Brito, J. Maia Alves, J.M Serra, A.M Vallêra, (2011). Recrystallization of silicon polygonal tubes using an electric closed molten zone. JOURNAL OF CRYSTAL GROWTH, 324, 26-30. ISSN 0022-0248. eISSN .

IEEE
R. M Gamboa, M.C Brito, J. Maia Alves, J.M Serra, A.M Vallêra, "Recrystallization of silicon polygonal tubes using an electric closed molten zone" in JOURNAL OF CRYSTAL GROWTH, vol. 324, pp. 26-30, 2011. 10.1016/j.jcrysgro.2011.03.037

BIBTEX
@article{29933, author = {R. M Gamboa and M.C Brito and J. Maia Alves and J.M Serra and A.M Vallêra}, title = {Recrystallization of silicon polygonal tubes using an electric closed molten zone}, journal = {JOURNAL OF CRYSTAL GROWTH}, year = 2011, pages = {26-30}, volume = 324 }