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Detalhes Referência

Tipo
Artigos em Revista

Tipo de Documento
Artigo Completo

Título
Dynamic prediction of point defects in Czochralski silicon growth. An attempt to reconcile experimental defect diffusion coefficients with the criterion

Participantes na publicação
N. Van Goethem (Author)
Dep. Matemática
CMAFcIO
A. de Potter (Author)
N. Van den Bogaert (Author)
F. Dupret (Author)

Data de Publicação
2008-02

Suporte
Journal of Physics and Chemistry of Solids

Identificadores da Publicação

Editora
Elsevier BV

Volume
69
Fascículo
2-3

Número de Páginas
5
Página Inicial
320
Página Final
324

Identificadores do Documento
DOI - https://doi.org/10.1016/j.jpcs.2007.07.129
URL - http://dx.doi.org/10.1016/j.jpcs.2007.07.129


Exportar referência

APA
N. Van Goethem, A. de Potter, N. Van den Bogaert, F. Dupret, (2008). Dynamic prediction of point defects in Czochralski silicon growth. An attempt to reconcile experimental defect diffusion coefficients with the criterion. Journal of Physics and Chemistry of Solids, 69, 320-324. http://dx.doi.org/10.1016/j.jpcs.2007.07.129

IEEE
N. Van Goethem, A. de Potter, N. Van den Bogaert, F. Dupret, "Dynamic prediction of point defects in Czochralski silicon growth. An attempt to reconcile experimental defect diffusion coefficients with the criterion" in Journal of Physics and Chemistry of Solids, vol. 69, pp. 320-324, 2008. 10.1016/j.jpcs.2007.07.129

BIBTEX
@article{61797, author = {N. Van Goethem and A. de Potter and N. Van den Bogaert and F. Dupret}, title = {Dynamic prediction of point defects in Czochralski silicon growth. An attempt to reconcile experimental defect diffusion coefficients with the criterion}, journal = {Journal of Physics and Chemistry of Solids}, year = 2008, pages = {320-324}, volume = 69 }