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Publication details

Document type
Journal articles

Document subtype
Full paper

Title
Measurement of the dopant concentration in a semiconductor using the Seebeck effect

Participants in the publication
J M Pó (Author)
Dep. Engenharia Geográfica, Geofísica e Energia
M C Brito (Author)
Dep. Engenharia Geográfica, Geofísica e Energia
IDL - Instituto Dom Luiz
J Maia Alves (Author)
Dep. Engenharia Geográfica, Geofísica e Energia
IDL - Instituto Dom Luiz
J A Silva (Author)
IDL - Instituto Dom Luiz
J M Serra (Author)
Dep. Engenharia Geográfica, Geofísica e Energia
IDL - Instituto Dom Luiz
A M Vallêra (Author)
Dep. Engenharia Geográfica, Geofísica e Energia
SESUL - Centro de Sistemas de Energia Sustentáveis

Scope
International

Refereeing
Yes

Date of Publication
2013

Where published
MEASUREMENT SCIENCE & TECHNOLOGY

Publication Identifiers
ISSN - 0957-0233

Volume
24
Number
5

Starting page
55601

Document Identifiers
DOI - https://doi.org/10.1088/0957-0233/24/5/055601


Export

APA
J M Pó, M C Brito, J Maia Alves, J A Silva, J M Serra, A M Vallêra, (2013). Measurement of the dopant concentration in a semiconductor using the Seebeck effect. MEASUREMENT SCIENCE & TECHNOLOGY, 24, ISSN 0957-0233. eISSN .

IEEE
J M Pó, M C Brito, J Maia Alves, J A Silva, J M Serra, A M Vallêra, "Measurement of the dopant concentration in a semiconductor using the Seebeck effect" in MEASUREMENT SCIENCE & TECHNOLOGY, vol. 24, 2013. 10.1088/0957-0233/24/5/055601

BIBTEX
@article{34682, author = {J M Pó and M C Brito and J Maia Alves and J A Silva and J M Serra and A M Vallêra}, title = {Measurement of the dopant concentration in a semiconductor using the Seebeck effect}, journal = {MEASUREMENT SCIENCE & TECHNOLOGY}, year = 2013, volume = 24 }