BIBLIOS

  Ciências References Management System

Visitor Mode (Login)
Need help?


Back

Publication details

Document type
Journal articles

Document subtype
Full paper

Title
Electric molten zone crystallization of silicon wafers

Participants in the publication
I Costa (Author)
M C Brito (Author)
Dep. Engenharia Geográfica, Geofísica e Energia
IDL - Instituto Dom Luiz
G Gaspar (Author)
Instituto Dom Luiz
IDL - Instituto Dom Luiz
J M Serra (Author)
J Maia Alves (Author)
Dep. Engenharia Geográfica, Geofísica e Energia
IDL - Instituto Dom Luiz
A Vallêra (Author)
SESUL - Centro de Sistemas de Energia Sustentáveis

Scope
International

Refereeing
Yes

Date of Publication
2013

Where published
SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Publication Identifiers
ISSN - 0268-1242

Publisher
IOP Publishing

Volume
28
Number
12

Starting page
125023

Document Identifiers
DOI - https://doi.org/10.1088/0268-1242/28/12/125023

Rankings
Web Of Science Q1 (2013) - 2.206 - Engineering, Electrical & Electronic
Web Of Science Q2 (2013) - 2.206 - Materials Science, Multidisciplinary
Web Of Science Q2 (2013) - 2.206 - Physics, Condensed Matter
SCIMAGO Q1 (2013) - 1.228 - Condensed Matter Physics
SCIMAGO Q1 (2013) - 1.228 - Electrical and Electronic Engineering
SCIMAGO Q1 (2013) - 1.228 - Electronic, Optical and Magnetic Materials
SCIMAGO Q1 (2013) - 1.228 - Materials Chemistry


Export

APA
I Costa, M C Brito, G Gaspar, J M Serra, J Maia Alves, A Vallêra, (2013). Electric molten zone crystallization of silicon wafers. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28, ISSN 0268-1242. eISSN .

IEEE
I Costa, M C Brito, G Gaspar, J M Serra, J Maia Alves, A Vallêra, "Electric molten zone crystallization of silicon wafers" in SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol. 28, 2013. 10.1088/0268-1242/28/12/125023

BIBTEX
@article{30346, author = {I Costa and M C Brito and G Gaspar and J M Serra and J Maia Alves and A Vallêra}, title = {Electric molten zone crystallization of silicon wafers}, journal = {SEMICONDUCTOR SCIENCE AND TECHNOLOGY}, year = 2013, volume = 28 }